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By Kenneth L. Ashley

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Wiley, New York, 2001. Johns, D. , and K. Martin . Analog Integrated Circuits. Wiley, New York, 1997. Marcus, A. , and W. Marcus . , Prentice-Hall, New York, 1948. Millman, J. Vacuum-tube and Semiconductor Electronics. McGraw-Hill, New York, 1958. Millman, J. Microelectronics. McGraw-Hill, New York, 1979. Nanavati, R. P. An Introduction to Semiconductor Electronics. McGraw-Hill, New York, 1963. Unit 3. Characterization of MOS Transistors for Circuit Simulation In this unit, the basic (Level 1 SPICE) dc MOSFET characteristic equations are introduced.

4. The omission of this current source in Fig. 6 implies that Vsb = 0 because the source and body are connected. This connection is possible to implement in special cases such as in some of our MOSFET lab projects where only one transistor on the chip is used or for the case of a differential stage where the source of two transistors is at the same node. It is also possible to eliminate the body-effect current source by bypassing the source resistor with a bypass capacitor. The capacitor places the source at signal ground.

The body-effect parameter, gmb, is defined as positive. 1) is negative. In Fig. 3(b) the body-effect current source is reversed to eliminate the minus sign, and the current source associated with gds is replaced with a resistance. The latter is possible as the voltage-dependent current source is between the same nodes as the voltage. 3. 1). The body-effect parameter, gmb, is a positive number such that current from the current source is in the direction opposite the arrow. (b) Current source of body effect is reversed to eliminate the minus sign, and a resistor replaces the gds current source.

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