Download CMOS analog circuit design by Phillip E. Allen, Douglas R. Holberg, Allen PDF

By Phillip E. Allen, Douglas R. Holberg, Allen

Revered authors Phil Allen and Doug Holberg deliver you the 3rd version in their renowned textbook, CMOS Analog Circuit Design. operating from the vanguard of CMOS expertise, Phil and Doug have mixed their services as engineers and teachers to give a state-of-the-art and potent assessment of the rules and methods for designing circuits. Their major targets are:

* to combine the educational and sensible viewpoints in a remedy that's neither superficial nor overly detailed
* to coach analog built-in circuit layout with a hierarchically prepared approach

Most of the circuits, recommendations, and ideas provided in CMOS Analog Circuit Design come at once from the authors' business adventure, making the ebook a precious source for either working towards engineers and scholars taking classes in analog electronics or CMOS analog design.

The trademark method of Phil and Doug's textbook is its layout recipes, which take readers step by step in the course of the production of genuine circuits, explaining and demystifying advanced layout difficulties. The e-book offers distinct insurance of often-neglected parts and intentionally leaves out bipolar analog circuits, seeing that CMOS is the dominant expertise for analog built-in circuit layout. acceptable for complicated undergraduates and graduate scholars with heritage wisdom in uncomplicated electronics--including biasing, modeling, circuit, research, and frequency response--CMOS Analog Circuit Design, 3rd version, offers an entire photo of layout (including modeling, simulation, and checking out) and allows readers to adopt the layout of an analog circuit that may be carried out via CMOS technology.

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Extra info for CMOS analog circuit design

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Twin-Well CMOS Fabrication Steps It is important for a circuit designer to understand some of the basic steps involved in fabricating a CMOS circuit. The fabrication steps of a generic submicron CMOS twin-well silicon-gate process will be described. Fabrication begins with a heavily doped p1 silicon wafer with a lightly doped p2 epitaxial layer (epi layer). A thin silicon-dioxide region is grown on the surface of the p2 epi layer. Subsequent to this, the regions where n-wells are to exist are defined in a masking step by depositing a photoresist material on top of the oxide.

Consequently, an n-type channel exists between the source and drain that allows carriers to flow. In order to achieve this inversion, the surface potential must increase from its original negative value (␾s 2 ␾F), to zero (␾s 5 0), and then to a positive value (␾s 5 2␾F). 3-3 Cross section of an n-channel transistor with small vDS and vGS > VT. is defined as the threshold voltage, VT. This condition is known as strong inversion. The nchannel transistor in this condition is illustrated in Fig. 3-3.

In order to use the sheet resistance of the polysilicon, the titanium must be blocked from being depositing onto the polysilicon. This is achieved with an additional mask—silicide block—which does precisely what its name implies. In some processes, the polysilicon is not doped. Intrinsic polysilicon has a very high resistance. To be useful as an analog component, a mask is used to selectively dope polysilicon resistors to achieve the desired resistivity. Invariably, analog circuits require high-performance capacitors.

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