Download Flip Chip Technologies by John H. Lau PDF

By John H. Lau

The electronics is abuzz with speak of turn chip applied sciences (FCT), the gang of innovative new concepts that permit chips to be hooked up to substrates with out using wires. through actually putting the chip the other way up and in direct touch with the substrate, FCT is a hugely efficient--and more and more popular--alternative to standard bonding suggestions. this can be the 1st ebook to hide the entire significant layout, fabrics, and production matters concerning FCT. that includes authoritative contributions from the world's top specialists, this quantity presents extensive dialogue of all 5 touch issues.

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Runge, P. , and P. R. Trischitta. J. Lightware Technol. LT-2, 744 (1984). 48. Bartolini, R. , A. E. Bell, and F. W. Spong. IEEE J. Quantum Electron. QE-17, 69 (1981). 49. Asbeck, P. , D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Klenters, and W. H. Ophey. Appl. Phys. Lett. 34, 835 (1979). 50. Hasse, M. , J. Qiu, 1. M. DePuydt, and H. Cheng. App/. Phys. Lett. 59, 1272 (1991). 51. Thijs, P. J. , L. F. Tiemeijer, P. I. Kuindersma, 1. J. M. Binsma, and T. van Dongen. IEEE J. Quantum Electron.

Lou, J. P. J. Heemskerk, W. J. Klenters, and W. H. Ophey. Appl. Phys. Lett. 34, 835 (1979). 50. Hasse, M. , J. Qiu, 1. M. DePuydt, and H. Cheng. App/. Phys. Lett. 59, 1272 (1991). 51. Thijs, P. J. , L. F. Tiemeijer, P. I. Kuindersma, 1. J. M. Binsma, and T. van Dongen. IEEE J. Quantum Electron. 27, 1426 (1991). 52. , Y. Horikoshi, and D. Uemura. Jpn. J. Appl. Phys. Part 2, 19, L30 (1980). 53. Groves, S. , K. W. NiII, and A. 1. Strauss. Appl. Phys. Lett. 25, 331 (1974). 54. Tomasetta, L. , and e.

And the absorption coefficient a. 21) where x is the polarization unit vector and Eo is the constant amplitude. The complex propagation constant P is determined by substituting Eq. 21) in Eq. 22) where i1 is the complex index of refraction. It can be written as i1 = JI. 23) 30 SEMICONDUCTOR LASERS where 11 is the refractive index of the medium, IX is the power-absorption coefficient, and usually IX« Ilko. 25) where Eq. 20) has been used. 25) show explicitly how the refractive index and the net absorption coefficient are affected by external pumping of the semiconductor material.

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