Download Microelectronic Failure Analysis Desk Reference: 2001 by ASM International PDF

By ASM International

CD-ROM content material is in absolutely searchable Adobe Acrobat PDF layout, constructed through the digital equipment Failure research Society (EDFAS) guides Committee. offers new or accelerated assurance on vital thoughts for microelectronic failure research. Contents comprise: bottom isolation suggestions; Flip-chip concentrated ion beam bottom navigation; Circuit validation ideas; Copper metallization deprocessing; Tunnelling atomic strength microscopy; Scanning capacitance microscopy; Scanning probe microscopy; Packaging and chip cross-sectioning; thesaurus of failure research device acronyms; up-to-date key notice index to ISTFA lawsuits volumes and to the Microelectronic Failure research table Reference, 4th version. (+VAT on united kingdom orders)

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Extra resources for Microelectronic Failure Analysis Desk Reference: 2001 Supplement

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Engel, "Electrical Characterization of Circuits with Low-k Dielectric Films and Copper Interconnects," to be published in Proceedings from the 27th International symposium for Testing and Failure Analysis. 1361/mfas2001p047 All rights reserved. org ALTERNATIVES TO CROSS-SECTIONAL SAMPLE PREPARATION FOR PACKAGE AND BOARD-LEVEL FAILURE ANALYSIS Roger J. Stierman and Charles A. Odegard DSPS Packaging Development Texas Instruments ABSTRACT Cross sectioning plays a central role in failure analysis within the semiconductor industry.

Additionally, even if the analyst was able to remove most of the contamination, residue is likely to be left behind. This presence of any residual contamination will most definitely impact any subsequent materials analysis. Figure 1 also helps illustrate the high precision and accuracy which can be achieved with FIB cross sections. Once a close manual mechanical cross sectional approach is completed, leaving the analyst within 2-5um of the desired target, the FIB allows the analyst to incrementally remove very small amounts of material in an extremely controlled fashion.

Typically, “90 degree grind and 90 degree polishing” times range from 30 minutes to several hours. This depends on many factors, including the speed of the wheel, the type and grit of grinding media, the amount of downward force applied during the sectioning process, the composition of the die substrate, the thickness of the substrate and the width of the sample being cross sectioned. The main problem with the “90 degree grind and 90 degree polish” method is that the entire substrate must be polished to the desired cross-section site.

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