Download Semiconductor Lasers by Govind P. Agrawal PDF

By Govind P. Agrawal

On account that its invention in 1962, the semiconductor laser has come far. Advances in fabric purity and epitaxial progress recommendations have resulted in various semiconductor lasers protecting a large wavelength variety of zero. three- a hundred ~m. the improvement through the Seventies of GaAs semiconductor lasers, emitting within the near-infrared quarter of zero. 8-0. nine ~m, ended in their use for the 1st iteration of optical fiber conversation platforms. despite the fact that, to make the most oflow losses in silica fibers happening round 1. three and 1. fifty five ~m, the emphasis quickly shifted towards long-wavelength semiconductor lasers. the cloth process of selection during this wavelength variety has been the quaternary alloy InGaAsP. over the last 5 years or so, the serious improvement attempt dedicated to InGaAsP lasers has led to a know-how mature sufficient that lightwave transmission platforms utilizing InGaAsP lasers are at the moment being deployed through the international. This e-book is meant to supply a accomplished account of long-wave­ size semiconductor lasers. specific realization is paid to InGaAsP lasers, even supposing we additionally think of semiconductor lasers working at longer wave­ lengths. the target is to supply an up to date realizing of semicon­ ductor lasers whereas incorporating contemporary learn effects that aren't but to be had within the publication shape. even though InGaAsP lasers are usually used for example, the fundamental thoughts mentioned during this textual content follow to all semiconductor lasers, regardless of their wavelengths.

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And the absorption coefficient a. 21) where x is the polarization unit vector and Eo is the constant amplitude. The complex propagation constant P is determined by substituting Eq. 21) in Eq. 22) where i1 is the complex index of refraction. It can be written as i1 = JI. 23) 30 SEMICONDUCTOR LASERS where 11 is the refractive index of the medium, IX is the power-absorption coefficient, and usually IX« Ilko. 25) where Eq. 20) has been used. 25) show explicitly how the refractive index and the net absorption coefficient are affected by external pumping of the semiconductor material.

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