Download Silicon Devices: Structures and Processing by Kenneth A. Jackson PDF

By Kenneth A. Jackson

Silicon is crucial fabric for the electronics undefined. In glossy microelectronics silicon units like diodes and transistors play a tremendous function, and units like photodetectors or sunlight cells achieve ever extra value. This concise guide offers with the most very important subject matters for the electronics undefined. global popular authors have contributed to this distinctive evaluate of the processing of silicon and silicon units.

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Extra info for Silicon Devices: Structures and Processing

Example text

The ability to grow dislocation-free crystals depends critically on control of the shape of the solid-liquid interface in the meniscus region. Why any crystal takes the shape it does is closely linked to this problem, and is examined first. The external shape of a crystal is related to two basic parameters, each a generic term covering several associated attributes: (a) Temperature, T, which includes all aspects of heat flow conduction, convection, etc. - and generation - from the main heater, or from latent heat at the interface.

One end of the channel is clamped to a flowing water cooler, and so held at around 35-40°C. The other end is attached to a heater, whose temperature is {loo! -c & 60 c m 5 I I I I 40 20 0 I L Float zone N-doped - Float zone standard Czochralski 0-doped Figure 1-9. A comparison of warp and slip after loading slices (1 h at 11 50°C) (LH: left hand, RH: right hand). [Note that curvature in a silicon slice is hardly cvcr a simple saucer shape; it is more like a potato chip (potato crisp). 4 Single Crystal Silicon gradually increased.

1977). Spreading resistance measurements taken on the slices cut from Table 1-3. The effect of resistivity striations on device mean value of performance. c:standard deviation, the cut-off frequency. 5 Czochralski Silicon Epitaxy therefore is one way to overcome the bulk striation problem. Another is the neutron transmutation doping method already described, and whose importance in the high voltage and power fields will now be more fully appreciated. Again the costs are obviously somewhat higher than for the conventionally doped materials, but the fabrication and device performance are far superior.

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